MRAM Research Scientist

Introduction
IBM Research Scientists are charting the future of Artificial Intelligence creating breakthroughs in quantum computing discovering how blockchain will reshape the enterprise and much more. Join a team that is dedicated to applying science to some of today’s most complex challenges whether it’s discovering a new way for doctors to help patients teaming with environmentalists to clean up our waterways or enabling retailers to personalize customer service.

Your Role and Responsibilities
Research and develop Spin-Transfer Torque MRAM (STT-MRAM) and related spintronics technologies at the IBM Almaden Research Center in San Jose CA.

Plan and carry out experiments to understand the basic science underlying these technologies and make a breakthrough in technology performance. Develop new magnetic materials devices and physics to reduce the switching current and improve the density of Spin-Transfer Torque MRAM. Innovate in at least several of the following technical areas: develop magnetic materials build and improve laboratory equipment characterize magnetic materials fabricate devices electrically measure devices analyze electrical data and perform theoretical calculations and simulations. Summarize results draw conclusions and present results on a regular basis. Work in a small team as both a strong team player and an independent individual contributor; be highly adaptive to the team’s needs.
Excellent communication skills strong internal motivation and a growth mindset are required. An interest in working at the intersection between science and technology development is a big plus. This position requires working hands-on in-person in the lab five days a week.

Required Technical and Professional Expertise

• Bachelor’s degree in physics materials science electrical engineering or related field
• Proven track record of experimental accomplishment
• 3 years of experience with electrical or magnetic devices

Preferred Technical and Professional Expertise

• PhD degree in physics materials science electrical engineering or related field
• 4 years of experience with magnetism and magnetic materials Heusler alloys thin film deposition and magnetic tunnel junctions and materials development for STT-MRAM
• Strong background in solid state physics and devices with expertise in magnetics MRAM devices magnetic tunnel junctions and spintronics and both DC and high frequency electrical testing and measurements
• Experience with thin film characterization techniques (X-ray diffraction AFM VSM SQUID-VSM FMR and Kerr microscopy including use of cryostats and electrical probes) programming (Labview MATLAB and Python micromagnetic simulations) and device fabrication including lithography
• Demonstrated track record of starting and leading research projects