Lead the integration of advanced DRAM technologies addressing manufacturability and performance issues through collaboration with cross-functional teams and experiment management in an R&D environment.

Our vision is to transform how the world uses information to enrich life for all .
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence inspiring the world to learn communicate and advance faster than ever.
We are part of Micron's Technology Development organization where world-class engineers work in an industry-leading 300mm R&D facility to enable future memory scaling.
In this role you will focus on the performance and manufacturability concerning the next-generation memories developed by Micron specifically focusing on advanced layered memory technology. Your work will bridge the gap between process development simulation and characterization to solve complex integration and circuit challenges. This is a place where your expertise in semiconductor device physics will drive real impact in the relentless pursuit of innovation!
Responsibilities

• Lead technology integration activities to enable the manufacturability of innovative Advanced DRAM technology.
• Collaborate with cross-functional teams including build product engineering and advanced mask groups to resolve yield and margin issues.
• Design and manage experiments within the R&D fab to optimize process flows and meet product requirements.
• Analyze inline defect and probe data to improve device performance reliability and process margins.
• Develop creative solutions and summarized action plans to address sophisticated technical problems.
• Partner with simulation and modeling groups to refine device components like charge storage and thin-film transistors (TFTs).

Minimum Qualifications

• Bachelor's degree in Engineering Physics or a related technical field.
• 5+ years of relevant proven experience.
• Significant experience with semiconductor process integration and memory technologies (DRAM or NAND).
• Strong foundation in semiconductor device physics and data analysis using DOE or statistical techniques.
• Proven ability to lead technical projects and handle complex experiments in a fab environment.
• If you're excited about this role but don't meet every requirement we encourage you to apply.

Preferred Qualifications

• Master's degree or PhD in Electrical Engineering or Physics.
• Direct experience with advanced stacked memory technology or alternative memory integration.
• Expertise in circuit/architecture issues as they relate to sophisticated memory scaling.

As a world leader in the semiconductor industry Micron is dedicated to your personal wellbeing and professional growth. Micron benefits are designed to help you stay well provide peace of mind and help you prepare for the future. We offer a choice of medical dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget. Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury and paid family leave. Additionally Micron benefits include a robust paid time-off program and paid holidays. For additional information regarding the Benefit programs available please see the Benefits Guide posted on micron.com/careers/benefits .
Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race color religion sex sexual orientation age national origin citizenship status disability protected veteran status gender identity or any other factor protected by applicable federal state or local laws.
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To learn more about Micron please visit micron.com/careers
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